Publication on OZONE in Jpn. J. Appl. Phys.
1994-2004.
Archive of Japanese Journal of Applied Physics.
search condition = 'Ozone' : 90 articles were found.
Si
2. Jpn. J. Appl. Phys. Vol. 24 (1985) pp.L227-L229 : (l)
Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
TATSUMI,Toru / AIZAKI,Naoaki / TSUYA,Hideki
5. Jpn. J. Appl. Phys. Vol. 28 (1989) pp.2421-2424 : (rp)
Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I) -- Optimization of the HF Treatment --
Maki Suemitsu, Tetsuya Kaneko and Nobuo Miyamoto
11. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L661-L663 : (0101,0802)
Enhanced Thermal Oxidation of Silicon by UV-Irradiation
Yutaka Ishikawa, Tsuyoshi Shibamoto, Takeshi Uchihara and Ichiro Nakamichi
16. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.3488-3490 : (0803,0202)
Oxidation of Si(100) Surfaces with Bi and Ag Overlayers in Ozone Atmosphere
Tomoyuki Yamada, Mitsuhiko Ogihara and Hitoshi Abe
18. Jpn. J. Appl. Phys. Vol. 31 (1992) pp.1148-1152 : (0801,0109)
Low-Temperature Oxidation of Silicon in Dry O2 Ambient by UV-Irradiation
Yutaka Ishikawa, Tsuyoshi Shibamoto and Ichiro Nakamichi
19. Jpn. J. Appl. Phys. Vol. 31 (1992) pp.2925-2930 : (1003,1110)
Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure
Takaaki Kawahara, Akimasa Yuuki and Yasuji Matsui
20. Jpn. J. Appl. Phys. Vol. 32 (1993) pp.L748-L751 : (1008,0801)
Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposition Reactor Using the Tetraethylorthosilicate (TEOS)/He, TEOS/O2/He, and TEOS/O3/He Systems
Motoaki Adachi, Kikuo Okuyama, Noboru Tohge, Manabu Shimada, Jun-ichi Sato and Masakazu Muroyama
23. Jpn. J. Appl. Phys. Vol. 32 (1993) pp.6141-6146 : (1007,0801)
Vacuum-Ultra-Violet and Ozone Induced Oxidation of Silicon and Silicon-Germanium
Ian W. Boyd, Valentin Craciun and Asghar Kazor
24. Jpn. J. Appl. Phys. Vol.33(1994) pp.L473-L475 : (0804,1008)
Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
Katsuhiro Fujino, Yasuyuki Egashira, Yukihiro Shimogaki and Hiroshi Komiyama
25. Jpn. J. Appl. Phys. Vol.33(1994) pp.2019-2024 : (0801,0702)
Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
Katsuhiro Fujino, Yuko Nishimoto, Noboru Tokumasu and Kazuo Maeda
26. Jpn. J. Appl. Phys. Vol.33(1994) pp.2703-2707 : (0804,0702)
Effect of Added Ethanol in Atmospheric-Pressure Chemical Vapor Deposition Reaction Using Tetraethoxysilane and Ozone
Masahiko Maeda and Koichi Ikeda
29. Jpn. J. Appl. Phys. Vol.34(1995) pp.L1148-L1150 : (0801,0702)
Film Formation by a New Chemical Vapor Deposition Process Using Ionization of Tetraethylorthosilicate
Motoaki Adachi, Kikuo Okuyama, Toshiyuki Fujimoto
30. Jpn. J. Appl. Phys. Vol.34(1995) pp.L1606-L1608 : (0802,0109)
X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity Ozone
Akira Kurokawa and Shingo Ichimura
32. Jpn. J. Appl. Phys. Vol.34(1995) pp.2182-2190 : (0804,1110)
Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition
Koichi Ikeda, Satoshi Nakayama, Masahiko Maeda
37. Jpn. J. Appl. Phys. Vol.35(1996) pp.1573-1578 : (0804,1110)
Behavior of Alkoxy-Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone
Koichi Ikeda and Masahiko Maeda
38. Jpn. J. Appl. Phys. Vol.35(1996) pp.4438-4443 : (0702,0101)
Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System
Motoaki Adachi, Kikuo Okuyama, Toshiyuki Fujimoto, Jun-ichi Sato and Masakazu Muroyama
41. Jpn. J. Appl. Phys. Vol.36(1997) pp.L922-L925 : (0801,0604)
Electrical Characterization of Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Tetrakis(diethylamino)silane and Ozone
Toshiro Maruyama
44. Jpn. J. Appl. Phys. Vol.36(1997) pp.5507-5513 : (0109,0803)
Characterization of Silicon Native Oxide Formed in SC-1, H2O2 and Wet Ozone Processes
Takeshi Ohwaki, Mikako Takeda and Yoshizo Takai
59. Jpn. J. Appl. Phys. Vol.38(1999) pp.6791-6796 : (F03,K04)
Effect of Ozone Annealing on the Charge Trapping Property of Ta2O5-Si3N4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition
Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki and Makoto Takiyama
60. Jpn. J. Appl. Phys. Vol.39 (2000) pp.L357-L359 : (A10,H02)
Initial Oxidation of Si(100)2~1 by Ozone: Transition of Growth Kinetics from Adsorption to Ultrathin Film Growth
Ken Nakamura, Akira Kurokawa and Shingo Ichimura
63. Jpn. J. Appl. Phys. Vol.39 (2000) pp.3542-3548 : (G02,H01)
Numerical Simulations of Films Formed by Cluster/Particle Co-Deposition in Atmospheric-Pressure Chemical Vapor Deposition Process Using Organic Silicon Vapors and Ozone Gas
Motoaki Adachi, Toshiyuki Fujimoto, Yoshifumi Itoh and Kikuo Okuyama
65. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.L46-L48 : (F04,H01)
A Low-Temperature Dehydration Method of Silica Films
Tatsuya Fukumura, Satoshi Sugahara and Masakiyo Matsumura
69. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.4011-4012 : (A10,H02)
Nitrogen Profile in SiOxNy Prepared by Thermal Nitridation of Ozone Oxide
Kaoru Nakajima, Kenji Kimura, Akira Kurokawa, Shingo Ichimura and Hisashi Fukuda
71. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.6556-6560 : (H02,A01)
Morphology of Silicon Oxide Film on Silicon Wafer Surface during Its Removal Process in a Hydrogen Ambient
Masanori Mayusumi, Masato Imai, Shinji Nakahara, Kazutoshi Inoue and Hitoshi Habuka
73. Jpn. J. Appl. Phys. Vol. 41 (2002) pp.L754-L757 : (A10,H02)
Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100)
Ken Nakamura, Shingo Ichimura, Akira Kurokawa and Kunihiko Koike
75. Jpn. J. Appl. Phys. Vol. 41 (2002) pp.5971-5973 : (A10,H03)
Improved Reliability Characteristics of Ultrathin SiO2 Grown by Low Temperature Ozone Oxidation
Hyo Sik Chang, Sangmoo Choi, Dae Won Moon and Hyunsang Hwang
81. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.1596-1597 : (A07,A11)
Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics
Hyunjun Sim, Hyosik Chang and Hyunsang Hwang
79. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.67-70 : (A04,G05)
Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
Miki Fujita, Noriaki Kawamoto, Tomohiko Tatsumi, Katsumi Yamagishi and Yoshiji Horikoshi
85. Japanese Journal of Applied Physics Vol. 43, No. 1, 2004, pp.281-286 : (H02,H03)
Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
Akira Kurokawa, Tetsuya Narushima, Ken Nakamura, Hidehiko Nonaka, Shingo Ichimura, Akiko N. Itakura and Masahiro Kitajima
87. Japanese Journal of Applied Physics Vol. 43, No. 6A, 2004, pp.3335-3339 : (A11,A10)
Reaction of Ozone and H2O2 in NH4OH Solutions and Their Reaction with Silicon Wafers
Dae-Hong Eom, Geun-Bae Lim, Jin-Goo Park and Ahmed A. Busnaina
Superconductive
3. Jpn. J. Appl. Phys. Vol. 28 (1989) pp.L1217-L1219 : (l)
In Situ Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Pure Ozone
Yoshimi Nakayama, Hirosato Ochimizu, Atsutaka Maeda, Akira Kawazu, Kunimitsu Uchinokura and Shoji Tanaka
4. Jpn. J. Appl. Phys. Vol. 28 (1989) pp.L1809-L1811 : (l)
Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control
Yoshimi Nakayama, Ichiro Tsukada, Atsutaka Maeda and Kunimitsu Uchinokura
6. Jpn. J. Appl. Phys. Vol. 29 (1990) pp.L70-L72 : (l)
Oxygen Control in Bi2Sr2Ca1Cu2Ox Superconducting Thin Films by Activated Oxygens
Kou Takeuchi, Masashi Kawasaki, Mamoru Yoshimoto, Yasutoshi Saito and Hideomi Koinuma
7. Jpn. J. Appl. Phys. Vol. 29 (1990) pp.L785-L787 : (l)
The Effects of Active Oxygen Atoms in Y-Ba-Cu-O Sputtering
Gensoh Matsubara and Yoichi Okabe
8. Jpn. J. Appl. Phys. Vol. 29 (1990) pp.L2041-L2044 : (l)
Preparation of Nearly Stoichiometric Superconducting Y-Ba-Cu-O Films by an MOCVD Technique Using Ozone
Hiroshi Ohnishi, Hiroshi Harima, Yoshihiko Kusakabe, Minoru Kobayashi, Susumu Hoshinouchi and Kunihide Tachibana 10. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L106-L109 : (0202,0801)
Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation
Shin Yokoyama, Takayuki Ishibashi, Masaaki Yamagami and Mitsuo Kawabe
12. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L703-L705 : (0202,0201)
Preparation of BiSrCaCuO Superconducting Thin Film by Molecular Beam Epitaxy with NO2
Mitsuhiko Ogihara, Hitoshi Abe and Tomoyuki Yamada
13. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L1114-L1117 : (0202,0201)
In Situ Preparation of Superconducting Bi2Sr2Can-1CunOy (n=1?5) Thin Films by Molecular Beam Epitaxy Technique
Ichiro Tsukada and Kunimitsu Uchinokura
14. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L1468-L1470 : (0202,0201)
Nearly Untwinned Superconducting Bi2Sr2CuOy Thin Films Grown on (Y, Nd)AlO3 (001) Substrate
Ichiro Tsukada and Kunimitsu Uchinokura
15. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.L1477-L1479 : (0202,0804)
Influence of Ozone Concentration on the Preparation of Stoichiometric Superconducting Y-Ba-Cu-O Films by a Metalorganic Chemical Vapor Deposition Technique
Hiroshi Ohnishi, Hiroshi Harima, Yoshiyuki Goto and Kunihide Tachibana
17. Jpn. J. Appl. Phys. Vol. 30 (1991) pp.3900-3903 : (0202,0801)
Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
Takayuki Ishibashi, Yoshitaka Okada, Shin Yokoyama and Mitsuo Kawabe
34. Jpn. J. Appl. Phys. Vol.35(1996) pp.L630-L633 : (0202,0804)
In Situ Surface Characterization of YBa2Cu3O7-x Thin Films Grown by Pulsed Laser Deposition
Takao Nakamura, Hiroshi Inada and Michitomo Iiyama
36. Jpn. J. Appl. Phys. Vol.35(1996) pp.L1260-L1263 : (0202,0801)
Thin Film Fabrication of Bi2(Sr, Ca)2CuOx Phase at Temperatures between 450 and 650C by Plasma-Assisted Ion Beam Sputtering
Tamio Endo, Haodong Yan, Masahito Wakuta, Hiroaki Nishiku and Masahiro Goto
46. Jpn. J. Appl. Phys. Vol.37(1998) pp.815-818 : (B02,F02)
Contact Structure for a Superconducting Field Effect Transistor Using SrTiO3/YBa2Cu3O7- x Films
Hiroshi Inada, Takao Nakamura and Michitomo Iiyama
66. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.L127-L130 : (B01,B02)
New Superconducting Sr2CuO4- Thin Films Prepared by Molecular Beam Epitaxy
Shin-ichi Karimoto, Hideki Yamamoto, Tine Greibe and Michio Naito
O3 production
21. Jpn. J. Appl. Phys. Vol. 32 (1993) pp.1229-1235 : (0906,0605)
Ozone Generation of Bipolar-Type Ceramic Ozonizer Module with Semiconductor Ceramic Discharge Electrode
Toshiya Watanabe, Yuji Aso and Chiaki Nakayama
33. Jpn. J. Appl. Phys. Vol.34(1995) pp.3718-3719 : (0907,0906)
Microwave Discharge in Air: Simulation of Artificial Ionization Layer
Hiroshi Amemiya, Mitsuru Maeda
42. Jpn. J. Appl. Phys. Vol.36(1997) pp.94-97 : (0202,1001)
Evaluation of Ozone Condensation System by Thermal Decomposition Method
Shinji Migita, Kazuo Sakai, Zon Mori, Hiroyuki Ota and Ryozo Aoki
45. Jpn. J. Appl. Phys. Vol.36(1997) pp.7437-7441 : (1110,1111)
Ozone Passivation Technique for Corrosive Gas Distribution System
Kunihiko Koike, Goichi Inoue, Takayoshi Takata and Tatsuo Fukuda
43. Jpn. J. Appl. Phys. Vol.36(1997) pp.5335-5339 : (1007,0906)
Ozone Generation by Positive and Negative Wire-to-Plate Streamer Discharges
Frank Hegeler and Hidenori Akiyama
54. Jpn. J. Appl. Phys. Vol.38(1999) pp.4595-4600 : (I05,I07)
Effect of Oxygen Concentration on the Detection of Mercury in an Atmospheric Microwave Discharge
Kamal Hadidi, Paul P. Woskov, Guadalupe J. Flores,Kareen Green and Paul Thomas
55. Jpn. J. Appl. Phys. Vol.38(1999) pp.4601-4604 : (I05,I08)
Ozone Generation by a Discharge in Bubbled Water
Satoshi Ihara, Tomoaki Miichi, Saburoh Satoh, Chobei Yamabe and Eiji Sakai
56. Jpn. J. Appl. Phys. Vol.38(1999) pp.4930-4931 : (J03,I05)
Investigations on the Rotating Electrode Effect on the Ozone Generation Process in a Plate Ozonizer
Tomasz Cieplak, Chobei Yamabe, Satoshi Ihara, Saburoh Satoh, Joanna Cieplak and Iwo Pollo
49. Jpn. J. Appl. Phys. Vol.38(1999) pp.221-224 : (I05,0000)
Spatial Distribution and Characteristics of Ozone Generation with Glow Discharge using a Double Discharge Method
Kazunori Hakiai, Daisaku Takazaki, Satoshi Ihara, Saburoh Satoh and Chobei Yamabe
53. Jpn. J. Appl. Phys. Vol.38(1999) pp.3731-3735 : (J02,H02)
Effect of CF4 Addition on Downflow Ashing under Atmospheric Pressure
Yoshinori Kataoka, Shuichi Saito and Kayoko Omiya
61. Jpn. J. Appl. Phys. Vol.39 (2000) pp.L1200-L1202 : (K09,D10)
Hyperthermal O3 Beam Produced by Laser Ablation of Solid-Ozone Film
Tetsuya Nishiguchi, Yoshiki Morikawa, Masaharu Miyamoto, Hidehiko Nonaka and Shingo Ichimura
72. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.7061-7066 : (I05,M02)
Studies on Electrical Discharge Effects in a Foaming Environment
Joanna Pawlat, Nobuya Hayashi and Chobei Yamabe
80. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.1422-1428 : (I05,M02)
Decolorization of Rhodamine B in Water by Pulsed High-Voltage Gas Discharge
Yoshiro Nakagawa, Susumu Mitamura, Yasuhiro Fujiwara and Takashi Nishitani
83. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.5313-5314 : (I05,I08)
Ozone Production Efficiency in Atmospheric Dielectric Barrier Discharge of Oxygen/Rare-Gas Mixture
Takashi Kimura, Taketoshi Yoshigoe and Akinori Oda
84. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.6578-6583 : (I05,M02)
Ozone Generation Characteristics by Superimposed Discharge in Oxygen-Fed Ozonizer
Hee-Sung Ahn, Nobuya Hayashi, Satoshi Ihara and Chobei Yamabe
86. Japanese Journal of Applied Physics Vol. 43, No. 1, 2004, pp.349-350 : (I05,I07)
Spatial Distribution of Gas Temperature Measured using Laser Interferometer on a Surface Discharge Ozonizer
Satoshi Ihara and Chobei Yamabe
88. Japanese Journal of Applied Physics Vol. 43, No. 7A, 2004, pp.4368-4372 : (I05,I07)
High Ozone Generation with a High-Dielectric-Constant Material
Masaharu Toyofuku, Yasunori Ohtsu and Hiroharu Fujita
90. Japanese Journal of Applied Physics Vol. 43, No. 8A, 2004, pp.5558-5561 : (I08,I05)
Calculation of Ozone Generation in AC Corona Discharge Reactor
Ashraf Yehia, Akira Mizuno and Mohamed A. M. El-Osealy
Oxide
22. Jpn. J. Appl. Phys. Vol. 32 (1993) pp.4078-4081 : (0703,0705)
Preparation of Tetragonal Perovskite Single Phase PbTiO3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introducing Pb and Ti Precursors
Tadahiko Hirai, Takaaki Goto, Hideki Matsuhashi, Satoshi Tanimoto and Yasuo Tarui
27. Jpn. J. Appl. Phys. Vol.33(1994) pp.5287-5290 : (0604,0801)
Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation
Kazuyoshi Torii, Sakae Saitoh and Yuzuru Ohji
28. Jpn. J. Appl. Phys. Vol.33(1994) pp.5291-5293 : (0801,0604)
High-Deposition-Rate Growth of Lead Titanate Zirconate Films by Reactive Electron Beam Coevaporation
Shoichi Mochizuki, Toshiyuki Mihara and Tadashi Ishida
31. Jpn. J. Appl. Phys. Vol.34(1995) pp.1906-1910 : (0604,0205)
Dielectric Properties of SrTiO3 Thin Films Grown by Ozone-Assisted Molecular Beam Epitaxy
Takao Nakamura, Hitoki Tokuda, So Tanaka, Michitomo Iiyama
39. Jpn. J. Appl. Phys. Vol.35(1996) pp.5117-5121 : (0604,0505)
Sintering of (Pb, La)(Zr, Ti)O3 in Ozone Atmosphere and Its Ferroelectric Properties
Yoshihiro Kawazu and Kaoru Tsuzuki
47. Jpn. J. Appl. Phys. Vol.37(1998) pp.2482-2484 : (B02,H06)
X-Ray Photoelectron Spectroscopy Study of Junction Interface in In/BaRbBiO Films
Fumihiko Toda, Tomoyuki Yamada, Satoru Kishida and Heizo Tokutaka
48. Jpn. J. Appl. Phys. Vol.37(1998) pp.5118-5122 : (H01,J04)
Preparation of Lead Titanate Thin Films Using Langmuir-Blodgett Method
Hiroshi Sugai, Nobuo Hoshi, Takashi Iijima and Hiroshi Masumoto
51. Jpn. J. Appl. Phys. Vol.38(1999) pp.1949-1951 : (C02,F02)
Large Negative Magnetoresistance in Thin Films of Magnetic Material Bi2-xPbxSr3Co2O9
Tsuyoshi Yamamoto, Ichiro Tsukada and Kunimitsu Uchinokura
52. Jpn. J. Appl. Phys. Vol.38(1999) pp.2917-2920 : (H04,H01)
Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition
Jeong-Woon Bae, Sang-Woon Lee, Kook-Hyun Song, Jung-Il Park, Kwang-Ja Park, Young-Wook Ko and Geun-Young Yeom
57. Jpn. J. Appl. Phys. Vol.38(1999) pp.5018-5022 : (A09,H04)
Comparison of Deposition Characteristics between Triethyl and Trimethyl Borates in an Atmospheric Pressure Chemical Vapor Deposition Equipment with Tetraethyl Orthosilicate and O3
Yoshito Yamamoto, Hiroshi Ikakura, Shoji Ohgawara and Masakazu Furukawa
58. Jpn. J. Appl. Phys. Vol.38(1999) pp.5322-5325 : (H01,J04)
Preparation of Lead Titanate Ultrathin Film Using Langmuir-Blodgett Film as Precursor
Hiroshi Sugai, Takashi Iijima and Hiroshi Masumoto
59. Jpn. J. Appl. Phys. Vol.38(1999) pp.6791-6796 : (F03,K04)
Effect of Ozone Annealing on the Charge Trapping Property of Ta2O5-Si3N4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition
Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki and Makoto Takiyama
62. Jpn. J. Appl. Phys. Vol.39 (2000) pp.316-319 : (K08,F04)
Highly Accurate Composition Analysis of (Pb,Zr)TiO3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
Mitsuo Suga, Kazuyoshi Torii, Takashi Kumihashi and Hiroshi Kakibayashi
64. Jpn. J. Appl. Phys. Vol.39 (2000) pp.5525-5527 : (F04,H04)
Initial Stage of Film Growth of Pulsed Laser Deposited YMnO3
Daisuke Ito, Norifumi Fujimura and Taichiro Ito
68. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.L1078-L1080 : (A01,H04)
Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone
Yuko Nishimoto, Noboru Tokumasu and Kazuo Maeda
70. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.4979-4983 : (F04,H04)
Enhanced Retention Characteristics of Pb(Zr, Ti)O3 Capacitors by Ozone Treatment
Kyu-Mann Lee, Hyeong-Geun An, June-Key Lee, Yong-Tak Lee, Sang-Woo Lee, Suk-Ho Joo, Sang-Don Nam, Kun-Sang Park, Moon-Sook Lee, Soon-Oh Park, Ho-Kyu Kang and Joo-Tae Moon
77. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.L435-L437 : (H04,A03)
Highly Sensitive ZnO Ozone Detectors at Room Temperature
Marcus Bender, Elvira Fortunato, Patri'cia Nunes, Isabel Ferreira, Anto'nio Marques, Rodrigo Martins, Nikos Katsarakis, Volker Cimalla and George Kiriakidis
78. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.L1066-L1068 : (D07,E03)
Pulsed-Laser Deposition of LiNbO3 Thin Films at Low Oxidation Gas Pressure with Pure Ozone
Sadao Higuchi and Ichiro Tsukada
89. Japanese Journal of Applied Physics Vol. 43, No. 8A, 2004, pp.5307-5312 : (D07,H01)
Pulsed-Laser Deposition of LiNbO3 in Low Gas Pressure Using Pure Ozone
Ichiro Tsukada and Sadao Higuchi
Nitride
35. Jpn. J. Appl. Phys. Vol.35(1996) pp.L1227-L1229 : (1110,1008)
Adhesion Improvement of Photoresist on TiN/Al Multilayer by Ozone Treatment
Wataru Wakamiya, Makoto Hirayama, Akihiko Yasuoka and Akira Kawai
59. Jpn. J. Appl. Phys. Vol.38(1999) pp.6791-6796 : (F03,K04)
Effect of Ozone Annealing on the Charge Trapping Property of Ta2O5-Si3N4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition
Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki and Makoto Takiyama
67. Jpn. J. Appl. Phys. Vol. 40 (2001) pp.L897-L899 : (H01,A10)
Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of Mixed O3/N2O Cryogenic Film
Tetsuya Nishiguchi, Yoshiki Morikawa, Masaharu Miyamoto, Hidehiko Nonaka and Shingo Ichimura
GaAs
50. Jpn. J. Appl. Phys. Vol.38(1999) pp.1124-1127 : (K10,A10)
Reduction of Surface Recombination in InGaAs/InP Heterostructures Using UV-Irradiation and Ozone
Rachid Driad, Zheng-Hong Lu, SylvainLaframboise, Donald Scansen,William RossMcKinnon and Sean Patrick McAlister
82. Jpn. J. Appl. Phys. Vol. 42 (2003) pp.4264-4272 : (A10,A02)
Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
Narayan Chandra Paul, Kazuki Nakamura, Masahide Takebe, Akira Takemoto, Takao Inokuma, Koichi Iiyama, Saburo Takamiya, Koichi Higashimine, Nobuo Ohtsuka and Yasuto Yonezawa
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